دیتاشیت NJVNJD2873T4G
مشخصات دیتاشیت
| نام دیتاشیت |
NJVNJD2873T4G
|
| حجم فایل |
114.365
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi NJVNJD2873T4G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+175°C@(Tj)
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Collector Current (Ic):
2A
-
Power Dissipation (Pd):
15W
-
Transition Frequency (fT):
65MHz
-
DC Current Gain (hFE@Ic,Vce):
120@500mA,2V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
300mV@1A,50mA
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Package:
TO-252
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Manufacturer:
onsemi
-
Part id:
515790
